PED3312M N-Channel Enhancement Mode Power MOSFET
● VDS = 18V, ID = 22 A
RDS(ON) < 4.3mΩ @ VGS=4.5V RDS(ON) < 4.6mΩ @ VGS=3.8V RDS(ON) < 5.0mΩ @ VGS=3.0V RDS(ON) < 6.8mΩ @ VGS=2.5V ESD Rating: 4000V HBM
● High Po.
It is ESD protected.
General Features
● VDS = 18V, ID = 22 A
RDS(ON) < 4.3mΩ @ VGS=4.5V RDS(ON) < 4.6mΩ @ VGS=3.8V .
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